@InProceedings{FornariRMCPPBRGA:2017:MoBeEp,
author = "Fornari, Celso Israel and Rappl, Paulo Henrique de Oliveira and
Morelh{\~a}o, S{\'e}rgio Luiz and Chitta, Walmir A. and Peres,
Marcelos Lima and Peixoto, Thiago R. F. and Bentmann, Hendrik and
Reinert, Friedrich and Gratens, Xavier P. M. and Abramof,
Eduardo",
affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto
Nacional de Pesquisas Espaciais (INPE)} and {} and {} and {} and
{} and {} and {} and {} and {Instituto Nacional de Pesquisas
Espaciais (INPE)}",
title = "Molecular Beam Epitaxial Growth of the Topological Insulator
Bi2Te3",
booktitle = "Resumos...",
year = "2017",
organization = "Brazilian Workshop on Semiconductor Physics, 18. (BWSP)",
abstract = "Bismuth telluride has been recently established as a simple model
system for the threedimensional topological insulator with a
single Dirac cone on the surface, as determined experimentally
from angle-resolved photoemission spectroscopy [1]. The
conductivity measurement of the metallic surface states in Bi2Te3
is hindered by the bulk conductivity due to intrinsic defects,
like vacancies and anti-sites. Counter doping (Ca, Sn or Pb) is a
way to control the Fermi level and suppress the bulk contribution.
Intrinsic conduction through topological surface states has been
also obtained in very thin insulating Bi2Te3 epitaxial films [2].
The small lattice mismatch (< 0.04 %) to bismuth telluride makes
BaF2 (111) a suitable substrate to grow high-quality thin films.
The molecular beam epitaxial (MBE) growth of Bi2Te3 layers on BaF2
(111) has recently been reported using either separate Bi and Te
solid sources [2] or Bi2Te3 and additional Te cells [3]. Depending
on the growth parameters, other BixTey phases are obtained or
mixed BixTey phases coexist in the same epitaxial film [4]. In
this work, we report on a systematic study of the MBE growth of
bismuth telluride films on BaF2 (111). The substrate temperature,
the Bi2Te3 source temperature and the additional Te flux were
varied in a wide range to determine the optimum growth conditions
for Bi2Te3 single phase films. The structural properties of the
films were investigated in situ by reflection high-energy electron
diffraction and ex situ by high-resolution x-ray diffraction,
x-ray reflectivity, atomic force microscopy (AFM), X ray
photoelectron Spectroscopy (XPS) and Angle Resolved Photoelectron
Spectroscopy (ARPES). [1] Y.L. Chen et al., Science 325, 178
(2009); [2] K. Hoefer et al., PNAS 111, 14979 (2014); [3] O. Caha
et al., Cryst. Growth Des. 13, 3365 (2013); [4] H. Steiner et al.,
J. Appl. Cryt. 47, 1889 (2014).",
conference-location = "Maresias, SP",
conference-year = "14-18 ago.",
language = "en",
targetfile = "Abramof_molecular.pdf",
urlaccessdate = "27 abr. 2024"
}